Plessey presents micro-LED display technology for AR & MR devices at Micro LEDforum

During the Micro LEDforum 2019 in Taipei, Taiwan on 2 July, Dr Wei Sin Tan, director of epitaxy & advanced product development at UK-based Plessey Semiconductors Ltd, discussed the firm’s proprietary gallium nitride on silicon (GaN-on-Si) platform for micro-LEDs for augmented reality (AR) and mixed reality (MR) devices.

Focusing on Plessey’s pioneering approach to enable manufacturing of monolithic micro-LED arrays using GaN-on-Si technologies to develop better optimized AR or MR displays applications, the presentation described the problems associated with incumbent micro-display technologies and the challenges that remain to pixel sizes of 8µm and sub-pixels of about 4µm.

Tags: Plessey GaN-on-Si microLED

Visit: www.plesseysemiconductors.com/products/microleds