MACOM demos W-band capability for 80-100GHz mmW communications, radar and passive imaging applications

In booth #532 at the IEEE’s International Microwave Symposium (IMS 2019) in Boston, MA, USA (4–6 June), MACOM Technology Solutions Holdings Inc of Lowell, MA, USA (which makes semiconductors, components and subassemblies for RF, microwave, millimeter-wave and lightwave applications) is giving a live demonstration of its W-band capabilities targeted at millimeter-wave (mmW) communications, radar and passive imaging applications, including:

a variable voltage attenuator (VVA) (typical variable attenuation range: 25dB);
a reflective SP2T switch with integrated bias circuits (typical insertion loss: 0.8dB);
a balanced 3-stage power amplifier (typical saturated power: 24dBm).

The control components are designed and manufactured using MACOM's proprietary aluminium gallium arsenide (AlGaAs) PIN diode technology, and aimed at enabling users to realize control components with superior RF performance at extremely high frequency (EHF). The inherent low resistance of AlGaAs technology can enable lower insertion loss, minimizing the need for expensive amplification functions and unwanted distortion at higher frequencies.

W-band is quickly becoming a reality for numerous applications such as point-to-point communications and passive image radar, notes MACOM. For passive image radar at 94GHz, there is no need to illuminate or excite the target as the system can receive and process the 94GHz frequency emissions naturally emitting from the environment. MACOM’s AlGaAs-based control components are helping to enable these applications by delivering high-frequency performance in the form of low insertion loss, high isolation and high linearity.

At IMS, MACOM’s booth features new product solutions optimized for 5G, wireless base-stations, radar, test & measurement (T&M) and industrial, scientific & medical (ISM) applications.

Tags: M/A-COM

Visit: www.ims-ieee.org

Visit: www.macom.com