Sanan IC adds 150mm 650V GaN-on-Si E-HEMT process to wafer foundry portfolio for power electronics

Sanan Integrated Circuit Co Ltd (Sanan IC) of Xiamen City, Fujian province (China’s first 6-inch pure-play compound semiconductor wafer foundry) has announced the commercial release of its 150mm gallium nitride on silicon (GaN-on-Si) wafer foundry services, intended for the latest high-voltage AC/DC and DC/AC power electronics applications.

G06P111 is a 650V enhanced-mode high-electron-mobility transistor (E-HEMT) GaN process that adds to the firm’s power electronics wafer foundry portfolio of wide-bandgap (WBG) compound semiconductors, which includes 100mm and 150mm silicon carbide (SiC) for high-voltage Schottky barrier diodes (SBD). Leveraging years of high-volume GaN manufacturing experience gained by parent company Sanan Optoelectronics for the LED market, Sanan IC is able to complement its foundry services with in-house metal-organic chemical vapor deposition (MOCVD) growth capabilities of high-voltage, low-leakage GaN-on-Si epitaxial wafers with high uniformity.

“The launch of our 650V GaN E-HEMT process technology exemplifies our commitment to advanced compound semiconductor manufacturing for serving the global market,” says Sanan IC’s assistant general manager Jasson Chen. “We view GaN-on-silicon as a complimentary technology to silicon carbide as key wide-bandgap semiconductors of choice for today’s high-voltage, high-power electronics industry,” he adds. “Component suppliers and system designers are migrating to wide-bandgap semiconductors over traditional silicon for enhanced performance, efficiency and reliability in high-power analog designs. Sanan IC is well positioned for success in serving this high-growth, large-scale power electronics market,” he believes.

Having passed the JEDEC standard for process reliability qualification, the G06P11 GaN-on-Si process offers device structures for 650V E-mode FETs that support a drain-to-source on-state resistance (RDS(on)) range of 50-400mΩ. Engineered for low leakage, low gate charge, high current density and low dynamic specific on resistance (Rsp), it enables ultra-fast-switching compact designs for high-temperature operation. Following later this year will be the launch of a 200V GaN E-HEMT process as well as a second-generation SiC SBD process with a merged PiN Schottky (MPS) diode structure.

Sanan IC says that GaN-on-Si as a process technology is suitable for the latest wave of consumer and server applications such as power adapters, USB-PD (power delivery), portable chargers and power factor correction (PFC) for AC/DC uninterrupted power supplies (UPS). The technology is also getting traction in other markets such as EV/HEV (hybrid/electric vehicles), LiDAR, and wireless charging. The GaN power device market is rising at a compound annual growth rate (CAGR) of 93% to $423m in 2023, according to the bull-case scenario of market research firm Yole Développement’s report ‘Power GaN 2018: Epitaxial, Devices, Applications, and Technology Trends report, December 2018’. Sanan IC says that it is dedicated to serving this emerging technology for these multiple market segments in the power electronics industry.

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Tags: Sanan OptoElectronics

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