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24 June 2019

Sanan IC adds 150mm 650V GaN-on-Si E-HEMT process to wafer foundry portfolio for power electronics

Sanan Integrated Circuit Co Ltd (Sanan IC) of Xiamen City, Fujian province (China’s first 6-inch pure-play compound semiconductor wafer foundry) has announced the commercial release of its 150mm gallium nitride on silicon (GaN-on-Si) wafer foundry services, intended for the latest high-voltage AC/DC and DC/AC power electronics applications.

G06P111 is a 650V enhanced-mode high-electron-mobility transistor (E-HEMT) GaN process that adds to the firm’s power electronics wafer foundry portfolio of wide-bandgap (WBG) compound semiconductors, which includes 100mm and 150mm silicon carbide (SiC) for high-voltage Schottky barrier diodes (SBD). Leveraging years of high-volume GaN manufacturing experience gained by parent company Sanan Optoelectronics for the LED market, Sanan IC is able to complement its foundry services with in-house metal-organic chemical vapor deposition (MOCVD) growth capabilities of high-voltage, low-leakage GaN-on-Si epitaxial wafers with high uniformity.

“The launch of our 650V GaN E-HEMT process technology exemplifies our commitment to advanced compound semiconductor manufacturing for serving the global market,” says Sanan IC’s assistant general manager Jasson Chen. “We view GaN-on-silicon as a complimentary technology to silicon carbide as key wide-bandgap semiconductors of choice for today’s high-voltage, high-power electronics industry,” he adds. “Component suppliers and system designers are migrating to wide-bandgap semiconductors over traditional silicon for enhanced performance, efficiency and reliability in high-power analog designs. Sanan IC is well positioned for success in serving this high-growth, large-scale power electronics market,” he believes.

Having passed the JEDEC standard for process reliability qualification, the G06P11 GaN-on-Si process offers device structures for 650V E-mode FETs that support a drain-to-source on-state resistance (RDS(on)) range of 50-400mΩ. Engineered for low leakage, low gate charge, high current density and low dynamic specific on resistance (Rsp), it enables ultra-fast-switching compact designs for high-temperature operation. Following later this year will be the launch of a 200V GaN E-HEMT process as well as a second-generation SiC SBD process with a merged PiN Schottky (MPS) diode structure.

Sanan IC says that GaN-on-Si as a process technology is suitable for the latest wave of consumer and server applications such as power adapters, USB-PD (power delivery), portable chargers and power factor correction (PFC) for AC/DC uninterrupted power supplies (UPS). The technology is also getting traction in other markets such as EV/HEV (hybrid/electric vehicles), LiDAR, and wireless charging. The GaN power device market is rising at a compound annual growth rate (CAGR) of 93% to $423m in 2023, according to the bull-case scenario of market research firm Yole Développement’s report ‘Power GaN 2018: Epitaxial, Devices, Applications, and Technology Trends report, December 2018’. Sanan IC says that it is dedicated to serving this emerging technology for these multiple market segments in the power electronics industry.

See related items:

Sanan IC announces commercial release of 6” SiC wafer foundry process

Sanan IC achieves automotive quality management system certification

Sanan IC extends III-V foundry from Greater China to North American, European and APAC markets

Tags: Sanan OptoElectronics

Visit: www.sanan-ic.com

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