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18 March 2019

ON Semiconductor launches industrial- and automotive-qualified SiC MOSFETs

ON Semiconductor of Phoenix, AZ, USA – which supplies power management, analog, sensors, logic, timing, connectivity, discrete, system-on-chip (SoC) and custom devices – has introduced two new silicon carbide (SiC) MOSFET devices. The industrial-grade NTHL080N120SC1 and AEC-Q101 automotive grade NVHL080N120SC1 bring the enabling, wide-ranging performance benefits of wide-bandgap technology to important high-growth end-application areas such as automotive DC-DC and onboard charger applications for electric vehicles (EVs) as well as solar and uninterruptible and server power supplies.

The launch strengthens ON Semiconductor’s growing SiC ecosystem that features complementary devices including SiC diodes and SiC drivers, plus vital resources such as device simulation tools, SPICE models and application information to help design and systems engineers meet their high-frequency circuit development challenges.

ON Semiconductor says that its 1200V, 80mΩ, SiC MOSFETs are rugged and align with the needs of modern high-frequency designs. They combine high power density with highly efficient operation that can significantly reduce operating costs and overall system size due to smaller device footprints. These characteristics also mean that less thermal management is required, further reducing bill of materials (BoM) costs, size and weight.

Key features and associated design benefits of the new devices include low leakage current, a fast intrinsic diode with low reverse recovery charge (which gives steep power loss reduction and supports higher-frequency operation and greater power density) and low Eon and Eoff/fast turn ON and OFF combined with low forward voltage to reduce total power losses and therefore cooling requirements. Low device capacitance supports the ability to switch at very high frequencies, which reduces troublesome EMI issues. Meanwhile, higher surge, avalanche capability and robustness against short-circuits enhances overall ruggedness, gives improved reliability and longer overall life expectancy.

ON Semiconductor says that a further unique benefit of its new SiC MOSFET devices is a patented termination structure that adds to reliability and ruggedness and enhances operational stability. The NVHL080N120SC1 has been designed to withstand high surge currents and offers high avalanche capability and robustness against short circuits. The AEC-Q101 qualification of the MOSFET (plus other SiC devices offered) ensures that they can be fully utilized in the growing number of in-vehicle applications emerging as a result of increasing electronic content and electrification of powertrains. A maximum operating temperature of 175°C enhances suitability for use in automotive designs as well as other target applications where high density and space constraints are pushing up typical ambient temperatures.

“Increasingly, the most important applications and current mega trends demand all-round performance beyond that of regular silicon devices,” says Gary Straker, VP & general manager, Power MOSFET Division, Power Solutions Group. “ON Semiconductor’s comprehensive SiC portfolio, enhanced by the introduction of these two new MOSFETs and supported by an ecosystem of tools and resources, means that not only can we provide the complete wide-bandgap component solution but that we can lead engineers through the development and design-in process to achieve a solution that performs to expectations, is cost-effective and has reliability coupled with longevity.”

ON Semiconductor’s SiC devices and solutions are on display in booth #611 at the Applied Power Electronics Conference & Exposition (APEC 2019) in Anaheim, CA, USA (17-21 March). The firm plans to launch further wide-bandgap devices throughout 2019.

See related items:

ON Semiconductor adds AEC-qualified SiC Schottky diodes for demanding automotive applications

ON Semiconductor partners with Audi on electronics for autonomous and electric vehicles

ON Semiconductor joins CharIN ecosystems in developing EV charging standards

Tags: SiC Schottky barrier diodes SiC power devices

Visit:  www.apec-conf.org

Visit:  www.onsemi.com

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