- News
5 November 2019
GaN Systems Cup competition winners honored at China Power Supply Society awards ceremony
At an awards ceremony on 3 November at the China Power Supply Society Conference (CPSSC), GaN Systems Inc of Ottawa, Ontario, Canada (a fabless developer of gallium nitride-based power switching semiconductors for power conversion and control applications) - alongside the China Power Supply Society (CPSS), China Power Society Science Popularization Committee, and Tsinghua University - has announced the winners of the fifth annual ‘GaN Systems Cup’ design competition.
The contest challenges top engineering teams from China’s leading universities to design new or improved power electronics systems using GaN power transistors from design to build that meets specified requirements. This year’s challenge was to develop a high-efficiency, high-power-density AC/DC power supply for data-center server power applications with GaN Systems’ 650V power transistors. The design had to meet several requirements: 400W-rated output power, 220VAC input voltage range/48VDC output voltage, and 94% efficiency at 50% load and greater than 3W/cm3 power density.
Forty teams participated in the first round of the competition, 30 teams moved on to the second round, and 12 participated in the final competition. Five engineering teams were awarded for their GaN-based inverter designs. Cash awards of 20,000-yuan, 10,000 yuan and 5,000 yuan were given to the top, first and second winning teams:
Top winner:
• Zhejiang University.
First:
• Huazhong University of Science and Technology
• North China University of Technology.
Second:
• Nanjing University of Aeronautics and Astronautics
• Heilongjiang University of Science and Technology.
Honorable mentions go to: Chongqing University of Technology, Hangzhou University of Electronic Science and Technology, Harbin Institute of Technology, Kunming University of Science and Technology, Shanghai Maritime University, Tsinghua University, and Yanshan University.
The top winning team from Zhejiang University designed a solution that had a 3.76W/cm3 power density with 93.8% efficiency. Designs were judged on meeting the design criteria, functionality during the test day, ingenuity, and quality of presentation.
“The ‘GaN Systems Cup’ continues to provide engineering students practical experience leveraging the benefits of GaN to address today’s high-efficiency, high-power needs,” says Paul Wiener, VP strategic marketing at GaN Systems.
GaN Systems E-mode GaN FETs Power electronics