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30 October 2019

AKHAN awarded US and Japan patents for n-type diamond

AKHAN Semiconductor Inc of Gurnee, IL, USA – which was founded in 2013 and specializes in the fabrication and application of lab-grown, electronics-grade diamond as functional semiconductors – has been issued patents by both the United States Patent and Trademark Office (USPTO) and Japan Patent Office (JPO) covering its n-type diamond semiconductor system and diamond-based multi-layer anti-reflective coating systems (key in military & aerospace sensor and detector applications, amongst others).

AKHAN says that patents 6580644 in Japan and 10,422,928 & 10,410,860 in the USA are key additions to its Miraj Diamond intellectual property portfolio, and are claimed to enable breakthrough performance in semiconductor devices as well as new capabilities in optical sensing, detecting and transmission. Through integration of high-quality diamond in semiconductor electronics applications and multi-layer materials, the systems allow for next-generation electronics performance and optical components with ultra-hardness, scratch-resistance, high thermal conductivity, hydrophobicity, chemical and biological inertness, and with high transmittance at a variety of critical angles, it is claimed.

See related items:

AKHAN issued Korean patent for fabrication of diamond semiconductor materials

AKHAN’s Miraj diamond technology awarded Taiwan patent and US trademark

AKHAN issued Japan patent covering fabrication of diamond semiconductor materials

AKHAN issued with patent covering fabrication of diamond semiconductor materials

Tags: Diamond

Visit: www.akhansemi.com

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