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18 September 2019

Transphorm and Mouser announce global distribution agreement

Transphorm Inc of Goleta, near Santa Barbara, CA, USA — which designs and manufactures JEDEC- and AEC-Q101-qualified 650V and 900V gallium nitride (GaN) field-effect transistors (FETs) for high-voltage (HV) power conversion applications — has signed a global agreement for semiconductor and electronic component distributor Mouser Electronics Inc to distribute its GaN FETs and evaluation tools.

Mouser is now offering devices from Transphorm’s range of 900V TO-220 and 650V TO-247 and TO-220 GaN FETs. The devices feature low crossover losses, reduced gate charge, and smaller reverse recovery charge, offering similar field reliability to silicon carbide (SiC) FETs and improved performance compared with silicon MOSFETs. Compared with competing GaN transistors, Transphorm’s FETs also offer what is claimed to be the industry’s highest threshold voltage (4V) and gate robustness rating (±20V).

Also available are Transphorm’s automotive-qualified GaN FETs (including the TPH3205WSBQA), the industry’s first GaN solution to earn AEC-Q101 qualification, and the TP65H035WSQA (the first 175°C -rated AEC-Q101-qualified device). As with non-automotive applications, in-vehicle power systems using the 650V GaN FETs can gain up to 40% more power density while reducing overall system costs by as much as 20% compared with similar silicon-based solutions, it is reckoned.

Lastly, Mouser stocks Transphorm’s evaluation platforms, allowing designers to study switching characteristics and efficiency. The kits support various power system topologies, including inverters, half-bridge buck or boost (through-hole and SMD solutions), and the bridgeless totem-pole PFC. They also cover a range of power ratings. Examples include the 1.2kW and 2.5kW half-bridge evaluation platforms as well as the 2.5kW and 4kW bridgeless totem-pole PFC evaluation platforms.

Tags: Transphorm GaN-on-Si GaN HEMT Power electronics Mouser

Visit: www.mouser.com

Visit: www.transphormusa.com

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