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Semiconductor Today Magazine


26 June 2006


LG Electronics selects InGaP HBTs from Anadigics

Anadigics Inc is shipping production volumes of dual-band indium gallium phosphide (InGaP) heterojunction bipolar transistor (HBT) power amplifiers (PAs) to LG Electronics. The PAs will be used in a range of LG’s CDMA handsets.

Ali Khatibzadeh, senior VP and general manager of Anadigics’ Wireless Products, said: "Our dual-band CDMA power amplifiers offer a stellar combination of high performance, small footprint, and low profile, making them ideal for today's popular ultra-thin handsets. We look forward to supporting LG on its new CDMA mobile designs."

The low profile dual-band CDMA PAs feature independent RF paths for optimal performance in both AMPS/cellular and PCS frequency bands, while achieving a 25% space savings compared with solutions requiring two single-band PAs, say the company.

Featuring 39% efficiency and 50 mA of quiescent current, the AWT6310 and AWT6314 dual-band CDMA PA modules deliver 27 dB gain in the cellular band and 26.5 dB gain in the PCS band, and offer a typical adjacent channel power of approximately -50 dBc in both bands. The 3 mm by 5 mm by 1 mm PAs also feature a common VMODE line to simplify the control interface and support single-mode operation up to full antenna power. Both are manufactured using material consistent with the European Union's Restriction of Hazardous Substances (RoHS).

Visit: http://www.anadigics.com