Mark Telford (Email)
Cell:+44 (0)7963 085 605
Semiconductor Today Magazine


10 June 2006


Cree’s new GaN HEMTs for WiMAX debut at IEEE MTT-S

Cree Inc will demonstrate three new gallium nitride (GaN) high electron mobility transistors (HEMTs) for WiMAX applications ranging from 2.4 to 3.9 GHz at the IEEE MTT-S International Microwave Symposium 2006 in San Francisco, June 13-15.

The new 30- and 120-watt transistors, CGH35030 and CGH35120, follow a 15-watt CGH35015 transistor released for sample shipments in May. Together, these devices cover multiple WiMAX applications requiring 2 to 12 watts average orthogonal frequency division multiplexing (OFDM) output power in the 3.3 to 3.9 GHz frequency band. Cree will also demonstrate its new 15-watt CGH27015, the first in a new line of transistors addressing the 2.4 to 2.9 GHz North American WiMAX market.

Simon Wood, Cree’s manager of RF product development, will present a paper entitled “High Efficiency, High Linearity GaN HEMT Amplifiers for WiMAX Applications” at the event’s workshop on “Advances in GaN HEMT Device Technology, Modeling and Applications” on June 11.

Visit: http://www.cree.com