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Semiconductor Today Magazine


14 June 2006


Cree demos 400-watt GaN S-Band transistor for WiMAX

Cree Inc has demonstrated a new high-power gallium nitride (GaN) RF power transistor for use in mobile WiMAX applications. The discrete transistor produces a record 400 watts of peak pulsed RF power at 3.3 GHz with 10.6 dB of associated power gain and 62% drain efficiency when operated at 40 volts. Initial sampling is expected later this year.

“We are pleased to announce that we have achieved this 400-watt milestone. To our knowledge, this is the highest output power publicly reported for a single packaged GaN transistor in this frequency range,” said Jim Milligan, Cree’s product manager for wide bandgap radio frequency products. “Upcoming mobile WiMAX applications are expected to require average orthogonal frequency-division multiplexing (OFDM) output power between 10 and 25 watts with peak-to-average ratios (PAR) as high as 12 dB. This will require transistors that are capable of delivering up to 400 watts of peak RF output power.”

Visit: http://www.cree.com