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3 April 2007


Technical University of Berlin orders MOCVD system to develop GaN/(Al,Ga,In)N alloy based materials

Aixtron AG of Aachen, Germany announced that the Technical University of Berlin's Institute of Solid State Physics has ordered a Thomas Swan MOCVD system. It will be used to develop GaN/(Al,Ga,In)N alloy based materials with a high aluminium concentration for laser applications and ultra-violet LEDs.

To be installed in the Eugene-Paul-Wigner Building, alongside the university’s AIX 200RF and AIX 200/4 systems, the new Close Coupled Showerhead (CCS) 3x2-inch wafer configured Fliptop Platform has a small footprint, and offers a new control system featuring digital mass flow and pressure controllers, along with a new safety system.

Prof. Dr. Michael Kneissl, head of the university’s Experimental Nanophysics and Photonics research group, concentrates on developing wide-bandgap semiconductor epitaxy, with a focus on controlling the formation of structures on the nanometre scale to tailor the electronic properties of materials such as: InGaN multiple-quantum-well (MQW) high power laser diodes; deep ultraviolet (UV) InAlGaN LEDs; laser diodes for the blue and green spectral range; microcavity disk lasers; and GaN-based VCSELs.

“After thorough examination we decided that the Thomas Swan Close Coupled Showerhead system best matches our requirements.” said Kneissl, head of the Experimental Nanophysics and Photonics group. He added: “Alongside our existing systems it will be a useful platform for us to develop high-Al III-nitride laser diodes and high-brightness UV LEDs."