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16 April 2007


Jazz launches 200GHz, 130nm SiGe BiCMOS process

Independent wafer foundry Jazz Semiconductor of Newport Beach, CA, USA, a subsidiary of Jazz Technologies Inc that focuses on specialty CMOS, has released its 130nm SiGe BiCMOS process technology (SBC13) for high-speed wireless, optical communications and millimeter-wave applications, available for prototyping through a multi-project wafer (MPW) program offering 5x5mm tiles.

“The Jazz SBC13 process further extends our SiGe technology roadmap and addresses our customers’ needs for a high-performance SiGe BiCMOS process by complementing our 200GHz 0.18µm process with a 200GHz process at the 0.13µm node,” says Marco Racanelli, VP of technology and engineering.

The technology includes advanced analog components with high-density digital circuitry to provide scaling of both the analog and digital blocks in a system-on-chip (SoC) approach. “Our SBC13 offering provides our customers an advantage in both performance and power consumption, with the combination of a 200GHz transistor with 1.2V low-power CMOS,” says Racanelli.

SBC13 uses a 1.2/3.3V dual-gate oxide process to form the base, industry-standard 130nm CMOS, and for high-performance RF and millimeter-wave ICs adds silicon germanium HBT NPN transistors, offering a range of Ft, Fmax, and breakdown voltages (BVceo) for design flexibility (with an Ft up to 200GHz and a separate higher voltage transistor). The process also supports up to six layers of aluminum metal, a 5.6 fF/µm2 linear MIM capacitor, a triple-well module, Nwell resistor, MOS varactor, and low- and high-value unsilicided poly resistors. The top metal is 3µm-thick aluminum to support high-Q inductors. The technology is offered through Jazz’s integrated design environment supporting the latest electronic design automation (EDA) tools and flows for fast and accurate design cycles of RF, analog and mixed-signal products.

Jazz also offers a comprehensive design and modeling environment tailored to address hurdles encountered in increasingly complex RF and analog designs. New PSP MOSFET models, statistical models, and a Process Control Model Tool (PCMT) are available. The new models and tools provide more accurate simulations, reduce design time and speed time-to-market, the firm claims.