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29 August 2007


Cree SiC MESFETs used in MILMEGA’s UHF power amplifiers

Cree Inc of Durham, NC, USA says that its silicon carbide MESFET devices are being used by MILMEGA Ltd of Ryde, Isle of Wight, UK to provide RF power in a new range of robust UHF power amplifiers, which are designed for the electromagnetic-compatibility (EMC) and test-instrumentation markets. The inherent benefits of SiC MESFETs provide high reliability and power density, ease of power upgrade, and portability, it is claimed.

Founded in 1987, MILMEGA designs and manufactures solid-state, high-power broadband amplifiers ranging in frequency from 200MHz to 14GHz, with power levels from 1W to above 1kW.

“We selected Cree SiC MESFET devices based on their power density and efficiency advantages,” says the firm’s managing director Pat Moore. “They enable amplifier products that are up to three times smaller and lighter than those using conventional transistor technology. This provides MILMEGA with a unique advantage in terms of performance and cost versus existing competitive products,” he claims.

“We are encouraged by our customers’ extremely positive feedback on these products from our product launch at the recent IEEE EMC Symposium [in Hawaii in July],” Moore adds. “Further, we continue to favor Cree’s products within their SiC MESFET and GaN HEMT families and have a number of innovative new products using these devices planned for release in the near future.”

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