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14 December 2007


Aixtron sells CRIUS Si-III/V tool for lasers on silicon

Aixtron AG of Aachen, Germany says that Philipps-University of Marburg in Germany has placed an order for a Close Coupled Showerhead (CCS) 300mm CRIUS cluster system that includes two silicon- and III/V-based MOCVD modules, for installation in the Central Technology Laboratory of the university’s Material Sciences Center.

This is Aixtron’s first sale of a CRIUS CCS system in 300mm configuration, says Aixtron’s director of marketing Dr Rainer Beccard. Applications are particularly suited to the growth of III/V compound semiconductors on commercially available silicon wafers.

Dr Wolfgang Stolz, head of the Central Technology Laboratory, says that the new system will be used for a collaborative research project funded by the BMBF (Germany’s Federal Ministry for Education and Research) that will bring together several industry and research institutions to explore diode lasers fabricated from the dilute nitride Ga(NAsP) material system deposited on silicon.

Ga(NAsP) is particularly suited to the realization of next-generation 850nm diode lasers for data communications. Researchers are working towards the practical growth of these devices on lower-cost wafers. This has the extra advantage of providing the means to monolithic integrate optoelectronics with silicon-based control microelectronics. In this way, high-bandwidth intra-chip and inter-chip optical interconnects could be made that would open-up completely new fields of applications.

Beccard comments that, in addition to laser-on-silicon integration, this type of equipment will play a very important role in the future, in particular when looking at applications like III/V on silicon for CMOS. The Ga(NAsP) material system will also become very important for high-efficiency III/V-solar cells on silicon, adds Stolz.

See related items:

Aixtron’s Q3 order intake rises 39% on Q2, raising full-year expectations

Epistar orders multiple Aixtron reactors to boost GaN LED capacity

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