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9 January 2007


Freescale's new InGaP-based devices feature active biasing technology

Freescale Semiconductor of Austin, USA has introduced four general-purpose broadband RF amplifiers for bandwidths from DC up to 6 GHz. Three of the new devices are based on indium gallium phosphide (InGaP), and are Freescale’s first to feature active biasing technology, which the company claims reduces performance variation due to temperature and supply voltage variations. The company says the amplifiers are suited for applications such as WiMAX base stations, meter readers, set-top boxes, and RFID readers.



  • GaAs HFET.
  • 250 MHz to 3 GHz.
  • 21.5 dBm P1dB output power and 11.5 dB gain at 2140 MHz.


  • InGaP HBT.
  • DC to 4 GHz.
  • 24 dBm P1dB output power and 20 dB gain at 900 MHz.


  • - InGaP HBT.
  • - DC to 6 GHz.
  • - 21 dBm P1dB output power and 15.5 dB dBm gain at 900 MHz.


  • - InGaP HFET.
  • - DC to 4 GHz.
  • - 24 P1dB dBm output power and 15 dB of gain at 900 MHz.

The third-order output intercept points (IP3) for the devices range from 37 dBm to 41 dBm. All four are RoHS compliant, and offer a Moisture Sensitivity Level (MSL) rating of 1 at a 260°C peak package temperature. Each feature inherently low thermal resistance and low junction temperatures, says Freescale, and operate directly from a single 5V bias supply.

Samples of the MMG3014N and MMG3016N are due in March 2007, with production expected to start in May 2007. Samples of the MMH3111N should be available from February 2007, with production planned for June 2007. Volume production of the MMG3015N is due in February 2007.