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7 March 2007


Kopin’s GaN HEMTs qualified for production

GaAs-based HBT epiwafer supplier Kopin Corp of Taunton, MA, USA says it has developed gallium nitride high-electron-mobility transistors (HEMTs) for use in next-generation military, public mobile radio, WiMAX and WCDMA base-station products. The total addressable market for such GaN infrastructure products is estimated to be as high as $1bn annually, providing strong future revenue growth potential, the firm reckons.

“As the world’s largest supplier of epitaxial wafers grown by metal organic chemical vapor deposition, Kopin is committed to providing our customers with high-performance, high-quality GaN HEMT products by utilizing our infrastructure,” says president and CEO Dr John C. C. Fan. “Since 2004, we have been working with several US companies on the development of our GaN HEMT products, and we are delighted that a leader in GaN-enabled base-station products has recently qualified these wafers for production.”

“The superior electrical properties of GaN enable transistors with unparalleled levels of high power densities over wide frequency ranges,” says chief technology officer Dr Hong Choi. “GaN HEMTs can provide higher-efficiency, more compact solutions than competing technologies for a variety of commercial and military systems, including wireless base-stations, X-band radar, millimeter-wave military communication links, and electronic warfare,” he adds.

Kopin says that it has focused on using silicon carbide substrates, but efforts have also been extended to other starting materials, including sapphire.