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13 March 2007


MIT’s Deshpande Center awards grant for GaN-on-silicon HEMT project

The Deshpande Center for Technological Innovation, which is part of the Massachusetts Institute of Technology’s School of Engineering, is awarding $628,000 in grants to seven MIT research teams this spring.

The recipients include a $50,000 ‘Ignition’ grant for Tomás Palacios (assistant professor in the Department of Electrical Engineering and Computer Science and the Microsystems Technology Laboratory) for the project ‘Gallium Nitride High Electron Mobility Transistors’. This will investigate GaN fabrication technology using silicon substrates to reduce the cost and improve the performance of electronic products.

"Our goal is to assist in bringing MIT research projects out of the labs so they can have an even greater social, economic and academic impact,” says Leon Sandler, executive director of the Deshpande Center. “We look forward to working with the research teams to provide the resources they need to prove their commercial viability."

Each spring and fall, the Deshpande Center awards $50,000 Ignition Grants, which fund proof-of-concept explorations, and Innovation Grants ranging of $50,000-250,000 to help recipients assess and reduce the technical and market risks associated with their innovations. Also, the center's network of entrepreneurs, venture capitalists and academic and legal experts helps recipients assess the commercial potential of their innovations and make decisions that accelerate progress toward the development of a business plan or licensing strategy.

All grant projects will be featured on 12 April 2007 at the Center's invitation-only IdeaStream Symposium.