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31 May 2007


BOC Edwards targets compound semiconductor MOCVD with Helios 6 gas abatement system

Supplier of vacuum, abatement and chemical management equipment for semiconductor manufacturing, BOC Edwards of Crawley, UK has introduced the Helios 6 into its family of Helios exhaust gas abatement products for high hydrogen flow processes, such as Si and SiGe epitaxy, and the MOCVD growth of compound semiconductor materials.

Based on BOC Edwards’ inward-fired combustion technology, the Helios 6 has six inlets for process gases, and an additional inlet for gas box purges and other ancillary operations. BOC Edwards says the new product can reduce hydrogen concentrations below the lower explosive limit (LEL) in flows as high as 200 slm.

"Helios 6 gas abatement solution extends the capability of our Helios product line to accommodate higher flow levels and more gas inlets, substantially lowering the overall cost of ownership," said Peter Holland, regional business manager, BOC Edwards. "High fuel efficiency and no requirement for compressed air contribute additional cost savings when compared to alternative technologies, while our unique combustor is designed to reduce the hydrogen content to safe levels even at the highest flow rates."

The Helios 6 is available now on the standard Helios platform, and the six inlet head design will also be available on BOC Edwards’ line of Atlas gas abatement products in the future.

See related item:

Linde sells BOC Edwards’ Vacuum and Semiconductor Equipment business to private equity firm