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17 May 2007

Nitronex launches 100W GaN-on-Si HEMT power transistor for WiMAX

Nitronex of Durham, NC, USA, which manufactures RF power transistors for commercial wireless infrastructure, broadband and military markets, has developed a 28V, 100W gallium nitride high-electron-mobility transistor (HEMT).

Designed using Nitronex’s SIGANTIC NFR1 process, the NPT25100 GaN-on-silicon power transistor is designed for 2.3-2.7GHz WiMAX applications. Typical performance is rated using a mobile WiMAX waveform digital modulation scheme defined as a single-carrier OFDM (orthogonal frequency-division multiplexing) signal 64-QAM 3/4, 8-burst, 3.5MHz channel bandwidth, and 10.3dB PAR (peak-to-average ratio) @ .01% probability on CCDF (complementary cumulative distribution function). Under these test conditions, the NPT25100 will deliver 14.5dB of gain (typical), 21% efficiency, and less than 2.5% EVM (error vector magnitude) - all at >10W of power.

“The market for 2.5GHz WiMAX solutions is accelerating and the NPT25100 HEMT device will deliver the kind of price and performance our customers need,” says VP of sales & marketing Chris Rauh.

The NPT25100 is packaged in a thermally enhanced copper moly copper package that will be offered in both bolt-down and pill versions. Samples and application boards will be available from June and full production qualification is expected in July. The 1000-piece suggested price is $90.