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Last week US defense contractor Raytheon Co filed a complaint in the US District Court of Central California against RF Micro Devices Inc of Greensboro, NC, USA, according to a report from Reuters. Raytheon alleges that RFMD’s RF3866 two-stage low-noise amplifier infringes one of its patents (issued in 1992).
Raytheon is seeking damages “adequate to compensate Raytheon for infringement” of its high-electron-mobility transistor (HEMT) technology.
RFMD responds that it will defend itself against the charges. “We feel that the claim is without merit and that it will result in a favorable disposition for RFMD,” says chief financial officer Dean Priddy.
Visit: http://dockets.justia.com