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7 November 2007


TranSiC launches first SiC switching power transistor in TO-220 package

TranSiC AB of Kista, Sweden, which was spun off from the Royal Institute of Technology in December 2005 and develops power transistors in wide-bandgap silicon carbide, has launched the first silicon carbide switching power bipolar junction transistor (BJT) in a TO-220 package. This follows the firm’s introduction of engineering samples of its BitSiC1206 chip earlier this fall.

The new BitSiC1206 (1200 Volt, 6 Amp) device is a ‘normally off’ transistor (which is much desired in the power electronics industry) and can handle very high junction temperatures. Currently, there is nothing else available that is“normally off’ for such high breakdown voltages and high junction temperatures (above 225°C), claims CEO Bo Hammarlund.

SiC Schottky diodes have been available for a few years, but designers have been in need of a switching transistor. “Our first release of the chip was successful, and we have plans now to follow up this release with high-temperature (250°C) metal can packaging for our BitSiC as well," says Hammarlund. The BitSiC also has a negative temperature coefficient, so it is suitable for parallel coupling for higher currents.

TranSiC says that a few applications are arising where designers wants to migrate from silicon power components, e.g. controlling high-power (1kW+) motors in hybrid electric vehicles (HEVs), trains and avionics, as well as next-generation wind turbines and distributed electrical power grids. For all these applications, SiC can solve the problems of a high-temperature environment, electro-magnetic interference (EMI) and switching losses, the firm says.

Engineering samples of the packaged BitSiC1206 transistor are available now. A data sheet can be obtained via the firm's website.

See related item:

TranSiC, KTH and Acreo share €1.3m in Swedish funding to develop SiC power modules

Search: Silicon carbide Power transistors