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2 October 2007


Spire receives $1m SBIR contract for high-power red diode lasers

Spire Corp of Bedford, MA, USA has received a two-year, $998,514 Phase II Small Business Innovative Research (SBIR) contract from the US Missile Defense Agency (MDA) to develop highly reliable, high-power cryogenic red diode lasers grown by MOCVD on gallium arsenide wafers.

Spire’s subsidiary Bandwidth Semiconductor, which manufactures concentrator solar cells as well as custom LEDs and diode lasers using MOCVD growth facilities in Hudson, NH, will carry out technical tasks related to epitaxial material growth and device processing.

“High-power diode laser array technology is of interest to Spire because of its importance to this nation's defense,” says Spire’s CEO and chairman Roger Little. “It also complements our solar cell product line.”

See related item:

Spire receives NASA contract for thermo-photovoltaic cells