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16 October 2007


In brief: Huga Optotech; Momentive Performance Materials; SMI’s largest GaN system

Huga qualifies AIX 2800G4 HT system

Aixtron AG of Aachen, Germany says that Huga Optotech Inc, which is a top-two manufacturer of InGaN-based LED chips in Taiwan, has qualified its recently acquired Aixtron AIX 2800G4 HT MOCVD reactor, shortly after installation at its facility in Taichung Industrial Park, Taiwan.

Founded in 1998, Huga uses several Aixtron reactors to produce blue and green high-brightness GaN-based LED epiwafers. In 2006, the firm nearly doubled its annual revenue.

The new system is now fully operational, producing high volumes of LEDs with excellent yield and uniformity according to Huga’s president Sybil Yang, and has helped the firm to meet a large rise in orders from its customer base.

See related items:

CrystalQ and Aixtron develop 6-inch GaN-on-sapphire wafer

LED makers report progress at ICNS

THELEDS adds two more Aixtron reactors for blue LEDs

Mainland China’s SCNU installs Aixtron MOCVD system

Search: Aixtron InGaN LEDs AIX 2800G4 HT MOCVD

See: Aixtron Company Profile

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Momentive launches PBN products for CIGS PV manufacturing

Momentive Performance Materials Inc of Strongsville, OH, USA has launched a new product line of pyrolytic boron nitride (PBN) crucibles, heaters and coatings for the production of copper indium gallium diselenide (CIGS) photovoltaic solar cells.

PBN can provide a higher level of chemical and thermal stability and a lower total cost of ownership compared to other ceramic materials, says the firm. Due to its relatively low wetting by most molten metals, PBN can typically withstand the high temperature and high-volume throughput demands of CIGS solar cell manufacturing with minimal deterioration.

“With these new products, we’ve built upon the capabilities of materials long used in the demanding semiconductor manufacturing environment,” says John Mariner, heater systems product manager, Momentive Quartz and Ceramics.



SMI sells its largest GaN system

Structured Materials Industries Inc (SMI) of Piscataway, NJ, USA has sold its largest GaNomite GaN MOCVD system, capable of depositing on either several 2” wafers or a single 6” or 8” wafer.

The reactor is capable of operating well through 1200°C, using SMI’s new patent-pending face-cooled showerhead, which offers two-line injection for uniform ammonia and precursor isolation, as well as zoned radial precursor isolation for depletion effect cancellation.

The system also offers a center heater design for full deposition-plane thermal uniformity, tunable at all temperatures. The showerhead also offers one of the largest optical access ports in the industry, SMI claims, suiting optically monitored film deposition for researchers and single large wafer manufacturers.

The large-area deposition tool suits LED and electronic device film growth and provides an alternative and economical solution for GaN materials research compared to commercial production tools, SMI claims.

“This system will be our most advanced nitride tool yet — providing advanced heating and monitoring capabilities not previously available — and contributes to our growing line of research and pilot reactor systems,” says Dr Gary S. Tompa, president and CEO.