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14 November 2006


Mitsubishi develops new GaAs FETs for WiMAX base transceiver stations

Mitsubishi Electric Corporation of Tokyo, Japan has developed three internally impedance matched high output power GaAs Field Effect Transistors (FETs) for 2.5 GHz and 3.5 GHz band WiMAX base transceiver stations, and will begin shipping samples on December 20 this year.

Models MGFS45B2527C and MGFS45B2325C offer 30W of power output, a linear power gain of 11dB, adjacent channel leakage of -45dBc, and are for the 2.5-2.7GHz frequency range. Model MGFC47B3436C offers 50W of power output, a linear power gain of 10dB, adjacent channel leakage of -45dBc, and is for the 3.4-3.6GHz frequency range.

Mitsubishi says that it has been able to reduce adjacent channel leakage power (ACP) to –45dBc by developing an internally impedance matched circuit that reduces distortion and using a FET chip optimized for each frequency band. -45dBc ACP at a low quiescent current (0.9A for MGFS45BxxxxC) is the "best performance in the industry", says Mitsubishi. The company adds that the new models energy consumption is only 1/7th of its previous models.

Due in December 2007, the company also plans to develop 5 GHz band devices.