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16 November 2006


RFMD introduces GaN wideband power amplifier ICs

RF Micro Devices Inc (RFMD) has introduced and is providing samples of its gallium nitride (GaN) wideband power amplifier ICs, for Tier 1 WiMAX, cellular base station and Public Mobile Radio (PMR) applications.

"Our GaN process technology positions RFMD to provide the high-power, broadband solutions needed to meet growing customer demand for more cost-effective and more efficient deployment of next-generation wireless infrastructure," said Jeff Shealy, RFMD's VP, Infrastructure Product Group. "RFMD's GaN power ICs deliver a simple, single amplifier solution for wideband applications dependant on maximizing power, bandwidth and efficiency."

The new family includes multiple parts, RF3821 (8W P1dB WiMAX PA, 2.3-2.7GHz), RF 3823 (8W P1dB WiMAX PA, 3.3-3.8GHz), RF3822 (14W saturated power Public Mobile Radio PA, 100-1000MHz), and RF 3820 (8W P1dB cellular PA, 1.8-2.2GHz). Both WiMAX power amplifier ICs provide 29dBm linear output power with 2.5% EVM and flat gain of 11dB across multiple bands. The cellular power amplifier IC provides 27dBm linear output power with -50dBc ACPR and flat gain of 13dB across DCS/PCS/WCDMA frequency bands. The PMR power amplifier IC provides 14W to 12W saturated output power and flat gain of 11.5dB with PAE of 65% mid band at 500MHz. The designs operate on a 28V rail and include internal-matching elements to deliver a 50-ohm interface over the band of operation and are packaged in a thermally enhanced AlN package for efficient heat removal.

RFMD says production shipments of the new power amplifiers should begin early January, 2007.