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27 October 2006


Cree announces first power switch and diode co-pack

Cree Inc of Durham, NC, USA, which makes silicon carbide power semiconductors, has made available samples of its first power-device combination pack (co-pack), designed specifically to reduce costs and increase efficiency of inverters used in solar, UPS and motor-drive power

The new CID150660 co-pack features a 6A/600V Cree SiC Schottky diode combined with a 15A silicon insulated gate bipolar transistor (IGBT) from International Rectifier. It is available in an industry-standard TO-220-3 package.

The co-pack provides inverter designers with the potential to achieve new levels of efficiency at power levels up to 3kW, says Stuart Hodge, manager of applications engineering for power devices. "This is the first in a series of co-pack products targeted to reduce IGBT switching losses up to 50% and reduce overall inverter losses up to 25%. When compared with traditional silicon-based pn diodes, Cree's SiC-based Schottky diodes and co-pack solutions provide lower switching losses, higher-frequency
operation, and higher power densities."