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28 September 2006


ITME turns to silicon carbide with new Epigress tool

ITME (the Institute of Electronic Materials Technology), located in Warsaw, Poland, has ordered an Epigress VP508GFR MOCVD tool from Aixtron, for silicon carbide (SiC) research and pilot production. In particular, the system will be used for the epitaxial growth of n-type and p-type SiC layers for high-power and high-frequency devices.

The VP508GFR is due for delivery in Q4, 2006, and adds to the institute’s existing range of Aixtron systems. ITME has an AIX 200 and an AIX 200/4 system, both for GaInAsP applications, and an AIX 200RF-S for GaN. With these systems ITME covers virtually all the principal compound semiconductors, such as multilayer epitaxial structures based on GaAs/AlGaAs/GaInAsN, InP/InGaAs/InAlAs and GaN/InGaN/AlGaN.

Wlodek Strupinski, president of the III-V Epitaxy Laboratory at ITME, said: “The Epigress tool has a good reputation with many other leading institutes around the world and it will play a key role in our plan to develop SiC-based epitaxial materials for high performance devices”.

Visit: http://www.aixtron.com