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16 September 2006


Kyma introduces GaN and AlN templates

Kyma Technologies Inc of Raleigh, NC, USA has added high quality gallium nitride (GaN) templates and aluminum nitride (AlN) templates to its single-crystal nitride semiconductor substrate products.

“GaN template” refers to a composite substrate that in its simplest form is a thin layer of GaN deposited epitaxially on a foreign substrate such as sapphire or silicon carbide (SiC). The thickness of the GaN layer is usually between 10 and 250 microns.

Kyma’s new GaN templates are built on sapphire and are available in 2”, 3”, and 4” diameter. They exhibit low defect densities of ~ 1x107 cm-2 or lower and are epi ready. The AlN templates are available with a 1 micron thick layer of AlN deposited on sapphire, and are also available in 2”, 3”, and 4” diameter. The AlN and GaN template product line is complimentary to Kyma’s native GaN substrate product.

“Kyma’s nitride based templates offer a low cost substrate approach to achieving a dislocation density of 107 cm-2 while eliminating the need for expensive buffer layer processes that are difficult to control,” commented Dr. Ed Preble, Kyma’s VP of Engineering. “The use of our GaN and AlN templates offers customers an alternative to heteroepitiaxial growth on sapphire or SiC substrates.”

Keith Evans, Kyma’s president and CEO, said: “While we continue to invest in native GaN substrate manufacturing technology, which we believe represents the best long term solution for most if not all high performance nitride semiconductor devices, there is no denying the importance of template solutions in today’s market. It makes sense for Kyma to participate in this portion of the market and to take a leadership role going forward.”

Visit: http://www.kymatech.com