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13 May 2008


TranSiC launches SiC BJT and SiC Schottky diode in TO-220 package

Silicon carbide power transistor maker TranSiC AB of Kista, Sweden has made available engineering samples of the first SiC switching power bipolar junction transistor (BJT) together with an SiC Schottky diode in a TO-220 package.

The BitSiC1206 switching power transistor (a 1200V 6 Amp device that can handle very high junction temperatures) is a ‘normally off’ transistor (much in demand in the power electronics industry).

The launch follows last November’s introduction of engineering samples of the BitSiC1206 in a TO-220 package. There are currently no other ‘normally off’ power transistors available on the market for 1200V and high junction temperatures (e.g. more than 225ºC), according to CEO Bo Hammarlund.

Together with its partners, TranSiC is now defining the possible specifications for high-temperature packages and trying to find the right combinations of materials that can stand the demands of the automotive industry (especially for power cycling). A few applications are arising (e.g. hybrid electrical vehicles, and general high-power electric motor controllers) where designers want to move from silicon power components. For these applications, SiC can solve the problems associated with high-temperature environments, solar cell inverters, and switching losses.

TranSiC says that the first release of the BitSiC chip on DCB (direct copper bonded) was successful. One of the firm’s partners demonstrated that BitSiC transistors, using high-temperature metal can packaging, are capable of switching more than 6A at a temperature of 550ºC.

The BitSiC has a negative temperature coefficient, so it is also suitable for parallel coupling for higher currents.

TranSiC launches SiC BJT for 20A for power electronics

TranSiC is also now shipping engineering samples of what it claims is the first 20A, 600V SiC switching power BJT.

The BitSiC0620 is a ‘normally off’ transistor that can handle very high junction temperatures, and initial tests also show good immunity to cosmic radiation.

The SiC BJT has a very low collector-emitter saturation voltage (V CESAT), which enables a reduction in on-state power losses of more than 60% compared to silicon insulated-gate bipolar transistor (Si IGBT) technology with the same chip area.

The BitSiC0620 has a maximum current gain of about 30 and an open base breakdown voltage (BV CEO) of more than 600V. Additionally, the BJT exhibits fast switching due to the small amount of stored charge in SiC devices. The SiC BJT chip shows very good high-temperature capability, says TranSiC, and has been tested successfully up to more than 250˚C as well as to -80˚C.

TranSiC is promoting the silicon carbide BJT as an alternative to Si IGBTs in applications where low power losses, high switching frequencies, and high maximum junction temperatures are desired.

TranSiC offers SiC BJTs as single dies, as discretes in TO220 packagse, or on DCB substrates.

See related items:

Fox licenses SiC patents to European firm

TranSiC launches first SiC switching power transistor in TO-220 package

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