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26 November 2008


Crystal IS awarded $800,000 to advance development of AlN substrates for effective deep UV sources

Crystal IS Inc of Green Island, NY, USA, a manufacturer of UV-LEDs based on aluminum nitride (AlN) substrate technology, is to receive an $800,000 appropriation from the U.S. Department of Defense to advance development of large AlN crystals for effective deep ultraviolet sources.

As part of the program, Crystal IS will partner with the Army Research Laboratory in Adelphi, MD and the Electro-Optics Center (EOC) at Penn State University. The program will leverage the recent development of large single-crystal AlN substrates into robust semiconductor sources of deep ultraviolet light as well as other high power, high temperature applications for military applications, says the firm. 

“Our unique technology allows us to manufacture UV-LEDs with unsurpassed performance at truly commercially viable costs,” said Crystal IS CEO Steven Berger. “This grant serves as yet another validation of using AlN-based UV-LEDs to enable cleaner water and air for consumer, industrial and government customers.”

Picture: Dr Steven Berger.

The primary applications of UV-LEDs are as long lasting, energy efficient, water and air disinfection devices. Crystal IS Inc is developing its deep UV-LEDs at 265nm, the peak germicidal wavelength.

See related items:

Crystal IS appoints new CEO

Crystal IS wins $2m ATP award for deep UV LEDs

Crystal IS appoints Mueller

Crystal IS buys MOCVD reactors to develop UV LEDs

Market for GaN and AlN substrates forecast to exceed $440m by 2010

Search: Crystal IS AlN substrates Deep ultraviolet LEDs