News

22 January 2009

 

Digi-Key expands Cree portfolio to GaN HEMTs

Electronic component distributor Digi-Key Corp of Thief River Falls, MN, USA says that it is now stocking gallium nitride (GaN) HEMT transistors for general purpose microwave applications made by Cree Inc of Durham, NC. Digi-Key’s portfolio of Cree offerings already encompasses silicon carbide (SiC) power components, SiC MESFETs, and high-brightness LEDs.

Cree’s GaN HEMT general-purpose transistors, with power outputs of 10-90W, are suited to microwave applications that require high-efficiency, multi-octave bandwidth performance. The transistors offer high-frequency performance to 6GHz, high gain, and low parasitic capacitance within small package footprints. This enables smaller, lighter, and more energy efficient systems, often with fewer amplifier components, than required with other microwave transistor technologies, it is claimed.

“Digi-Key has the distribution expertise and industry channels to help accelerate the adoption of our GaN HEMT technology,” reckons Jim Milligan, Cree’s director of RF and microwave products.

See related items:

Cree samples high-efficiency 120W GaN HEMT microwave transistor

Digi-Key stocking Cree’s SiC RF power MESFETs

NIEC to launch SiC Schottky diodes in Japan using Cree’s chips

Search: Digi-Key Cree GaN HEMT SiC MESFETs HB-LEDs

Visit: www.digikey.com

Visit: www.cree.com