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13 January 2009


FBH orders Vistec litho system for GaAs and GaN R&D

Electron-beam lithography equipment maker Vistec Electron Beam GmbH of Jena, Germany has received an order for an SB250 series variable shaped beam lithography systems from Ferdinand-Braun-Institut für Höchstfrequenztechnik (FBH) in Berlin, Germany.

FBH explores technologies for innovative microwave and optoelectronic applications in close co-operation with industry, ranging from basic research projects to devices delivered as demonstrators or pilot series to industrial partners.

Installed in FBH’s existing process line, the new electron-beam litho system will be used for the development of electronic and optoelectronic high-power devices based on both gallium arsenide and gallium nitride. It will also be used as an in-house mask writer.

“The investment is vital for FBH in order to remain competitive,” says Dr Krueger, head of its Process Technology Department. “The system’s performance as demonstrated in a series of tests meets our demands and will provide a solid basis for future R&D of high-value products and services.”

The Vistec SB250 series was designed as a universal and cost-effective electron-beam lithography system for both direct-write and mask-making applications. As a variable shaped beam system operating at 50kV, it can deal with a great variety of substrates (in terms of both types and dimensions) using a maximum stage travel range of 210mm x 210mm in fully automated operation. The lithography performance, combined with a high throughput, opens possibilities for a wide range of applications, says Vistec.

“We are very glad to continue our long-standing partnership with the Ferdinand-Braun-Institute,” says Wolfgang Dorl, general manager of Vistec Electron Beam. “Vistec is looking forward to contributing with this new, highly flexible lithography system to FBH’s strategy to bridge the gap between research and application.”

See related item:

WIN orders second Vistec e-beam writer

Search: Vistec Electron-beam lithography GaAs GaN



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