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20 July 2009


IXYS launches pHEMTs, HBTs and MMICs in surface-mount packages

IXYS Corp subsidiary MicroWave Technology Inc (MwT) of Fremont, CA, USA, which manufactures GaAs-based devices, MMICs, and amplifier modules for microwave and wireless communications, has launched six AlGaAs/InGaAs pHEMT- and InGaP HBT-based high-frequency products and broadband MMIC amplifier products in surface-mount packages:

  • The MMA-020624-L3 is a 2–6GHz wideband linear driver in a 3mm x 3mm QFN package with 25dBm linear output power, 15dB of gain, and linearity of 40dBm OIP3.
  • The MMA-011015-C5 is a 1–10GHz broadband driver in a 5mm x 5mm QFN package, which provides 15dBm linear output power and 15dB of gain.
  • The MMA-061829-10 is a 6–18GHz broadband power amplifier in a 10mm x 10mm ceramic package, which has 30dBm (1 watt) of saturated power and 8dB of gain.
  • The MMA-121630-S7 is a 12–16GHz power amplifier in a 7mm x 7mm package, which provides 32dBm (1.6 watts) of saturated output power and 26dB of gain.
  • The MMA-022028-S7 is a 2–20GHz distributed power amplifier in a 7mm x 7mm ceramic package, which has 29dBm of saturated output power and 8dB of gain across the band.
  • The MHA-051023D-88 is a 50–1000MHz linear driver in a SOIC-8 package with excellent linearity. The push-pull amplifier provides 24dBm of linear output power, 16.5dB of gain, 42dBm of OIP3, and 76dBm of OIP2.

Hermetically sealed packages are also available for these MMIC products.

“We continue to develop and optimize the performance of high-frequency and broadband MMIC parts in various surface-mount packages targeted at a wide range of applications including broadband military EW and defense communications, wireless infrastructures, point-to-point microwave radios, instrumentation, CATV/FTTH and others,” says MwT’s general manager Dr Greg Zhou. “These fully matched MMIC amplifiers housed in surface-mount packages are designed for ease of use by our customers in terms of assembly and RF system integration,” he adds.

See related items:

IXYS expands 600V IGBT range with co-packaged SiC diode

IXYS launches GaN RF power amplifier for WiMAX/WLAN

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