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3 September 2009


Accel-RF launches high-power RF automated accelerated reliability test system for GaN devices

Accel-RF Corp of San Diego, CA, USA, which produces accelerated life-test/burn-in test systems for RF devices, has launched the High Power RF (HiPR-AARTS) Automated Accelerated Reliability Test System to help manufacturers prove reliability for application-specific devices.

Accel-RF says that manufacturers are using its equipment to prove intrinsic reliability and performance degradation characteristics of gallium nitride (GaN) technology on discrete devices and lower-power monolithic microwave integrated circuits (MMICs). The next stage in the development of the technology is to build and test high-power devices for use in radar and military and communication electronics.

“As reliability is proven on lower-powered devices, the technology evolution is moving toward high-power GaN, MMICs, HEMT and HFET devices that require significant advancements in reliability testing equipment,” says president & founder Roland Shaw. The new system is either liquid or air cooled, has RF and DC pulsing capability, and can handle device power dissipation of up to 200W each. “This new system can manage over seven times more power than our current-generation product. This capability allows our customers to lifetest their products at channel temperatures in excess of 300°C, with performance characterization at normal operating temperature levels,” Shaw adds.

“In addition to our customers, compound semiconductor manufacturers, specifically Wide Band-Gap initiative partners and Tri-Services component teams, are currently pushing the capabilities of our existing products,” says Shaw. “Our new High Power RF Reliability Test System will give our customers plenty of capability to prove reliability of new technology in real-life conditions,” he concludes.

See related item:

Accel-RF’s latest SBIR award to boost in-situ GaN device measurement

Search: Accel-RF GaN GaN MMICs HEMT HFET