30 April 2010


Nitronex and Modelithics release enhanced non-linear GaN device model

Nitronex Corp of Durham, NC, USA, which manufactures gallium nitride on silicon (GaN-on-Si) RF power transistors, and Modelithics Inc of Tampa, FL, USA, which provides RF and microwave simulation models for use in electronic design automation (EDA), have released the first non-linear model for Nitronex’s high-power NPT1012 device.

The model combines heating effects and static and dynamic bias characteristics with large-signal performance to deliver accuracy that is claimed to be unlike other GaN HEMT device models. The collaborative model predicts performance of the NPT1012 in broadband application circuits, specifically targeting the military communications, electronic warfare and radar markets.

Modelithics has worked with Nitronex on multiple projects during the past year as well as for this first external model release. “We have the same goal of enabling more efficient, higher-power, and broader-band GaN PA designs,” says Modelithics'’president & CEO Larry Dunleavy. The NPT1012 is now available as a free download from Modelithics’ website for Agilent Technologies Advanced Design System (ADS) and AWR Microwave Office (MWO) software.

The models will also be included in the next update of Modelithics Select free shareware library (available for ADS and MWO), which is also downloadable.

“We are enthusiastic about the global release of the NPT1012 model as a result of our collaboration with Modelithics for non-linear models of our thermally enhanced power products,” says Gary Blackington, Nitronex’s VP of worldwide sales & marketing. “The simulated performance predicted by the NPT1012 model, and the accuracy with which it compares to measured results in high-efficiency, high-power and broadband power amplifiers, has been well received by our strategic customer base,” he adds.

See related item:

Nitronex and Modelithics collaborate on non-linear GaN device models

Search: Nitronex Modelithics GaN-on-Si RF power transistors