13 August 2010


Crystal IS and Asahi Kasei to jointly develop large-diameter AlN substrates

Crystal IS Inc of Green Island, NY, USA, which makes ultraviolet light-emitting diodes (UVC LEDs) on aluminum nitride (AlN) substrates, and Asahi Kasei Corp, the parent company of one of Japan’s largest diversified industrial groups (whose electronics business includes semiconductor manufacturer Asahi Kasei Microdevices Corp), have signed a joint development agreement to create a manufacturing process for large-diameter AlN substrates based on Crystal IS’ proprietary intellectual property.

Development will take place at the Crystal IS facility and the program will run in parallel with the firm's UVC LED activities.

“Aluminum nitride substrates are a critical component in the fabrication of UVC LEDs for energy-efficient water and air sterilization applications,” says Crystal IS’ CEO Dr Steven Berger. “Building on our intellectual property to develop manufacturable large-diameter substrates is an important step towards high-volume production and long-term growth,” he adds.

“After a comprehensive study, we found Crystal IS wafer technology the most advanced and suitable for commercialization,” says Masafumi Nakao, who heads Asahi Kasei’s development of new business in compound semiconductors. “To reinforce our commitment to Crystal IS and the technology, we are happy to make a $2m investment in the company as we assess the long-term market potential of these substrates for LEDs and a number of other high-power applications.”

See related items:

AlN substrate used to make 260–240nm UV LEDs

UV LED market to grow to $250m in 2015

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