4 February 2010


IQE’s Wafer Technology division extends GaSb substrate range to 4”

Epiwafer foundry and substrate maker IQE plc of Cardiff, Wales, UK says that its substrate subsidiary Wafer Technology Ltd of Milton Keynes, UK is to extend its gallium antimonide (GaSb) product range to include 4-inch diameter wafers.

GaSb materials are used in the manufacture of a wide range of products including infrared laser diodes, detectors and thermophotovoltaic (TPV) cells that can convert infrared (heat) energy into electrical power.

The firm says that 4” GaSb-Te wafers are now available and can be specified in the same way as for existing 2” and 3” GaSb products. High-accuracy orientations (±0.1º) and proprietary epitaxy-ready finishes are offered to ensure consistent performance in epitaxial growth. Whole 4” wafer etch pit density (EPD) maps (69 points) are supplied to support yield maximization in the manufacture of large-area detector arrays.

“Delivering 4” GaSb product is an important milestone for Wafer Technology, especially at a time when the industry is looking to produce larger-area epitaxially grown arrays,” says Wafer Tech’s general manager Dr Mark J. Furlong. “Our 4” GaSb wafers have been very well received by our first customers qualifying this product, so we are looking forward to satisfying new demands for large-area GaSb wafers in 2010,” he adds.

See company profile: Wafer Technology Ltd

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