17 May 2010


Kyma launches AlN and GaN on Si template lines

Kyma Technologies Inc of Raleigh, NC, USA, which provides crystalline gallium nitride (GaN) and aluminum nitride (AlN) materials and related products and services, has launched two new nitride template product lines.

Kyma says that its AlN on Si templates are crack-free and low-bow and consist of a thin (up to 200nm) layer of crystalline AlN deposited on a Si (111) substrate. Diameters of 2”, 3”, and 4” are available. The highly-oriented sub-grain structure and smoothness (<1nm RMS) of the crystalline AlN layer provides an excellent epi-ready nucleation surface for customers to deposit GaN-based device layers, adds the firm.

Kyma’s GaN on Si templates are crack-free and low-bow and consist of a thin, smooth (<1nm RMS) layer of GaN deposited on top of a Kyma AlN on (111) Si template. The GaN on Si template products currently offered have a 500 nm GaN layer and 2”, 3”, and 4" diameters. The GaN surface is epi-ready for epitaxial growth of additional GaN and GaN-based device layers such as LEDs, field effect transistors (FETs), and Schottky diodes.

Tamara Stephenson, Kyma’s Technical Sales Engineer, says: “Our customers have been asking us to develop GaN and AlN template products based on Si substrates.  It is a great pleasure to begin accepting orders for these highly anticipated products.”

Dr Ed Preble, Kyma’s COO and VP Business Development added: “The market pull for Kyma’s template products is strong, especially for these GaN and AlN on Si templates. Important goals for us are to continuously improve and augment our growing portfolio of advanced crystalline III-N substrates according to the expanding needs of the market.”

In the future, Kyma will offer larger diameter templates and will also extend the GaN thickness.

See related items:

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Kyma wins $2.8m DoD funding for low-defect GaN development

InGaN LED spillover and efficiency droop

Kyma completes custom crystal fabrication facility

Search: Kyma Substrates GaN AlN