21 October 2010


TELEFUNKEN offers Si and SiGe epitaxial deposition services

Specialty analog & mixed-signal chip maker TELEFUNKEN Semiconductors GmbH of Heilbronn, Germany has announced the availability of in-line silicon and silicon-germanium (SiGe) epitaxial deposition service for customers (both commercial and non-commercial) worldwide to address increasing epitaxial layer market demand for high-speed amplifier and power driver applications.

“We are ready to provide high-quality silicon and silicon-germanium epitaxial service to support our 150mm wafer customers,” says chief technology officer Dr Volker Dudek. “Epitaxy is a key enabling technology for today's high performance devices,” he adds.

Certified according ISO 9001:2008 and ISO 14001:2009 since December 2009, TELEFUNKEN Semiconductors' fab has both single-wafer reactors and batch-wafer reactors tools to meet various in-line epitaxial requirements. The service offers Si epitaxial and ultra-thin SiGe:Si composite layers on buried doped regions. The firm also provides metrology services. The range of epitaxial layer thickness can vary from below 20nm up to 9µm, with resistivity from 0.005Ωcm to 15Ωcm.

TELEFUNKEN Semiconductors argues that, by outsourcing the epitaxial growth process, customers can benefit from the elimination of expensive equipment investment and significant operation and maintenance costs.

See related items:

TELEFUNKEN’s SiGe power HBT run rate reaches 100 million per year



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