29 September 2010


Dow Corning producing 76mm 4H-SiC with micropipe-free seeds

Dow Corning Compound Semiconductor Solutions (DCCSS) of Midland, MI, USA says that it has developed technology to grow 76mm-diameter 4H-SiC (silicon carbide) crystals that are free of micropipe defects. Crystals made from the new zero-micropipe technology are now made routinely and supply the DCCSS 76mm 4H-SiC wafer and epitaxy manufacturing line.

Since micropipe defects are highly focused on killer defects in SiC devices, a supply of SiC substrates free of micropipes establishes the potential to manufacture SiC devices with higher yields than what has been possible with available SiC substrates in the past, says the firm.

“Dow Corning will continue to invest in the advancement of our SiC technology to support our customers’ efforts in achieving their goals,” says commercial manager Fred Buether. “We’re using our technology experience to develop advanced application solutions for the power electronics market that result in innovative, energy-efficient products that are cost effective,” he adds.

See related items:

Dow Corning to produce 100mm SiC epi, joining 100mm substrates and 76mm substrates & epi

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