28 February 2011

Samsung selects Veeco MOCVD system for GaN-on-Si power electronics research

Epitaxial deposition and process equipment maker Veeco Instruments Inc of Plainview, NY, USA says that Korea’s Samsung Advanced Institute of Technology (SAIT) has selected Veeco’s TurboDisc K465i gallium nitride (GaN) metal-organic chemical vapor deposition (MOCVD) system for GaN-on-silicon research for power electronics.

“Being selected as a research partner for GaN-on-Si by SAIT is an important strategic R&D win for Veeco,” says William J. Miller Ph.D., executive VP of Veeco’s Compound Semiconductor business. “We look forward to continuing to work with SAIT to commercialize this technology for high-volume manufacturing of GaN-based power electronic devices,” he adds.

“The GaN power electronics market is expected to grow significantly in coming years, with potential applications in energy-efficient power conversion devices,” according to Jim Jenson, VP of marketing for Veeco’s Compound Semiconductor business.

The K465i incorporates Veeco’s Uniform FlowFlange technology for what is said to be superior uniformity and excellent run-to-run repeatability. Low-maintenance TurboDisc technology enables the highest system availability, excellent particle performance and high throughput, it adds. The production-proven K465i also provides ease-of-tuning for fast process optimization on wafer sizes up to 8 inches and fast tool recovery time after maintenance, the firm adds.

See: Veeco Company Profile

Tags: Veeco MOCVD GaN TurboDisc K465i

Visit: www.sait.samsung.com

Visit: www.veeco.com

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