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26 April 2016

EPC releases six videos featuring GaN technology in industrial and consumer applications

Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has posted to its website six new short videos presenting end-customer applications using eGaN FETs and ICs. The videos show how GaN technology is changing the way we live, and they challenge power systems design engineers to incorporate the high performance of GaN FETs and ICs into their next-generation power system designs.

The application demonstration videos posted are:

1. eGaN Technology Changing the Way We Live: Demonstrations from APEC 2016
CEO & co-founder Alex Lidow shows eGaN FETs and ICs in more than 10 applications, including single-stage 48V to point-of-load DC-DC conversion, wireless power transfer, LiDAR mapping, and envelope tracking.

2. eGaN Technology for Wireless Power Transfer
eGaN products are already used extensively in wireless power transfer systems, including a multi-mode system. This video shows how. In addition to EPC's demonstrations, several customer wireless power end-products are featured, such as those from WiTricity, Solace Power, and Gill Electronics.

3. eGaN FETs for LiDAR (light distancing and ranging)
LiDAR technology is rapidly gaining traction in applications where speed and accuracy is vital, such as in autonomous vehicle guidance and augmented reality systems. This video demonstrates the capability of eGaN FETs to enable high-current pulses with ultra-short transition times of a few hundred picoseconds.

4. eGaN FETs for Envelope Tracking
Envelope tracking can double communication base-station efficiency and increase cell-phone talk-time in both 4G and 5G standards. In this video, the ultra-fast performance of EPC's 60W, 20MHz bandwidth, 4-phase, LTE-compatible envelope tracking demonstration board is presented.

5. eGaN FETs, ICs, and Modules for 48V to Point-of-Load DC-DC Conversion
Re-thinking server power architecture used in the data center with GaN technology allows the elimination of the intermediate 12V bus currently used, while increasing power usage efficiency (PUE). In this video, two demonstrations are discussed, showing (1) a single-stage conversion from 48V to 1V at 40A, using a GaN-based module from Texas Instruments, and (2) a 48V to 1.8V at 20A single-stage hard-switched buck converter using eGaN ICs.

6. eGaN Technology Enabling 700W DCX DC-DC Conversion in Eighth-Brick DOSA form factor
This video showcases an eighth-brick, 700W DC-DC running in DCX mode. eGaN FETs enable higher power density in DOSA standard brick footprints due to gallium nitride's superior switching characteristics, thermal performance, and small size.

The presenters Alex Lidow, Michael DeRooij, David Reusch, John Glaser and Yuanzhe Zhang are EPC application engineers with over 75 years of experience working in power transistor design and applications. All five presenters have doctorates in scientific disciplines with extensive practical experience in the emerging GaN transistor and IC technologies.

"This collection of short, to-the-point videos introduces the viewer to very specific end-use applications currently enabled or enhanced by the high performance of gallium nitride FETs and ICs," says Lidow. "These videos are designed to spark innovation in the use of GaN products by innovative, forward-thinking power system design engineers."

The GaN application demonstration videos are accessible on the EPC video library or through the EPC YouTube Video Channel.

See related items:

EPC posts video series on how to design with GaN power devices for power conversion

Tags: EPC E-mode GaN FETs GaN-on-Si

Visit: http://epc-co.com/epc/DesignSupport/TrainingVideos.aspx

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