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18 May 2016

MACOM launches 300W plastic-packaged GaN-on-Si power transistor for commercial RF energy applications

MACOM Technology Solutions Holdings Inc of Lowell, MA, USA (which makes semiconductors, components and subassemblies for analog RF, microwave, millimeter-wave and photonic applications) has launched the MAGe-102425-300, a 300W gallium nitride on silicon (GaN-on-Si) rugged power transistor in cost-effective plastic packaging optimized for use in commercial-scale solid-state RF energy applications. Based on MACOM's Gen4 GaN technology, the MAGe-102425-300 delivers performance that defies the inherent power efficiency and density limitations of LDMOS at an equivalent price profile at scaled volume production levels, says the firm.

The intersection of GaN performance and silicon cost structures opens up an opportunity to leverage solid-state RF energy as a highly efficient and precise heat and power source for a wide range of commercial applications including microwave ovens, automotive ignition, lighting systems, and industrial, scientific & medical (ISM) applications such as RF plasma lighting, material drying, and blood and tissue heating and ablation. The RF devices that underpin these systems must strike an optimal balance of performance, power efficiency, small size, and reliability, at a price point that promotes mainstream commercial adoption.

Providing 300W output power and 70% efficiency at 2.45GHz, the MAGe-102425-300 meets the core technical requirements for next-generation power amplifiers proposed by the RF Energy Alliance (a non-profit technical association dedicated to unlocking the full potential of RF energy). Meanwhile, the cost structure and volume supply-chain benefits achieved with MACOM's Gen4 GaN technology position the MAGe-102425-300 to meet aggressive cost targets on a par with LDMOS, the firm says.

"Solid-state RF energy technology holds the promise to transform entire market segments, providing wide-ranging benefits from consumer goods to ISM systems and infrastructure," says senior director of marketing Mark Murphy. "The MAGe-102425-300 sets a new price and performance benchmark for RF power devices, affirms MACOM's GaN technology and application expertise, and signals a clear inflection point in the evolution toward mainstream RF energy adoption," he reckons. 

"The RF Energy Alliance recently published the RF Power Amplifier (PA) Roadmap, which sets parameters for future PA module generations that are viable alternatives to magnetron-based solutions," notes the RF Energy Alliance's executive director Klaus Werner. "The MAGe-102425-300's breakthrough in efficiency is in step with our PA Roadmap, enabling new markets for residential solid-state RF energy applications."

MACOM is giving a solid-state system demonstration, using the MAGe-102425-300, in booth 939 at IEEE's International Microwave Symposium (IMS 2016) in San Francisco (22-27 May).

Select products in MACOM's GaN power transistor portfolio for RF energy applications are sampling to qualified customers now.

See related items:

MACOM showcasing fourth-generation GaN technology for RF energy applications at European Microwave Week

Tags: M/A-COM GaN-on-Si RF power transistors

Visit: www.macom.com/rfenergy

Visit: www.rfenergy.org

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