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7 November 2016

Panasonic starting mass production of high-speed gate driver for X-GaN power transistor

Japan's Panasonic Corp is starting mass production this month of the AN34092B high-speed gate driver, optimized for driving its X-GaN power transistor. It will also start mass production of two types of X-GaN (the 70mΩ PGA26E07BA and the 190mΩ PGA26E19BA) and provide solutions in combination with high-speed gate drivers.

GaN is one of the next generation semiconductor compounds that can achieve space and energy savings when applied to transistors used in various power units. A gate driver is required to drive a transistor, but general gate drivers for conventional silicon transistors cannot exploit the potential of GaN transistors due to their different gate structures.

Panasonic says that the new AN34092B high-speed gate driver helps the X-GaN to safely achieve high-speed switching performance. It can drive transistors at frequencies of up to 4MHz and integrates the active Miller clamp function that prevents malfunction during high-speed switching. Using proprietary technology, the X-GaN achieves a 600V breakdown enhancement mode and features high-speed switching and low on-resistance.

Panasonic reckons that the combination of X-GaN and dedicated high-speed gate drivers can contribute to significant space and energy savings in various power conversion units for industrial and consumer use.

X-GaN and dedicated high-speed gate drivers are suitable for various applications such as 100W to 5kW power supply units, inverters, data centers, mobile base-stations, consumer electronics, audio-visual equipment, industrial and medical devices.

Both X-GaN and the dedicated high-speed gate drivers are being exhibited at the electronica 2016 trade fair in Munich, Germany (8-11 November).

See related items:

Panasonic showcases GaN-based technologies at PCIM Europe

Panasonic launching smallest E-mode 600V GaN power transistor

Infineon and Panasonic to establish dual sourcing for normally-off 600V GaN power devices

Panasonic develops 600V GaN power transistor with 'failure-free' stable switching operation

Tags: Panasonic GaN-on-Si power transistor Power electronics SiC

Visit: www.semicon.panasonic.co.jp/en/products/powerics/ganpower

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