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12 November 2018

Exagan extends range of G-FET and G-DRIVE power-conversion products for multi-kilowatt server and automotive applications

© Semiconductor Today Magazine / Juno PublishiPicture: Disco’s DAL7440 KABRA laser saw.

Gallium nitride technology start-up Exagan of Grenoble and Toulouse, France (founded in 2014 with support from CEA-Leti and Soitec) is extending its market reach by introducing new G-FET power transistors and G-DRIVE intelligent, fast-switching devices with enhanced power capabilities for automotive and server applications.

With the products’ drain-source on-resistance (RDSon) capabilities ranging over 30-65mΩ, the new versions provide enhanced performance and power efficiency for diverse applications including electric vehicles (EV), industrial equipment and data servers.

At the electronica 2018 trade show in Munich, Germany (12-16 November), Exagan is demonstrating the implementation of its products for kilowatt-range applications using topologies such as totem-pole power factor correction (PFC) to achieve high conversion efficiency as well as improved power density.

Power supplies for the fast-growing server market are one of the first power applications to benefit from Exagan’s GaN solutions. Global server shipments increased 20.7% year-on-year to 2.7 million units in first-quarter 2018, according to International Data Corp.

Another sector that can benefit from the enhanced products is automotive power electronics, where Exagan says its solutions provide robust performance and simplify design-in at the system level. During the electronica Automotive Conference (eAC), president & CEO Frédéric Dupont is giving a presentation ‘From Evolution to Revolution: Disrupting Automotive Power Conversion with GaN’ that explains how small, lightweight and highly cost-effective power solutions made with GaN can be applied in EVs.

“Our G-FET and G-DRIVE product lines offer the most comprehensive portfolio of easily integrated GaN solutions for an extensive range of applications spanning consumer, server and automotive markets,” claims Dupont. “To work closely with our customers, we recently opened application centers in France and Taiwan focused on delivering the most competitive GaN-based solutions for current and emerging power-conversion needs.”

Exagan says that the new GaN products prove its ability to provide multiple products using an established 200mm CMOS manufacturing process while maintaining full control of its proprietary GaN technology. Engineering samples (with associated evaluation boards) are available now.

See related items:

Exagan forms Taiwan subsidiary

Exagan launches G-FET power transistors and G-DRIVE intelligent fast-switching products for consumer, industrial and automotive applications

Exagan raises €5.7m to produce GaN-on-Si power-switching devices on 200mm wafers

X-FAB and Exagan to co-develop high-volume production of high-speed GaN-on-Si power switching devices on 200mm wafers

Tags: GaN-on-Si GaN switching device on silicon

Visit: www.electronica.de

Visit: www.exagan.com

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