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30 July 2019

GTAT introduces 150mm bulk SiC crystal material

GTAT Corp of Hudson, NH, USA (which produces crystal growth equipment for the solar, power electronics and optoelectronics industries as well as sapphire material for precision optics and other specialty industries) is introducing its CrystX silicon carbide (SiC) material for power electronics applications such as electric vehicles.

With decades of experience in crystal growth, GT Advanced Technologies is producing CrystX SiC in increasing volume for expanding markets that demand the technical advantages that the material enables. “Our heritage in crystal growth gives us a tremendous platform from which to produce CrystX silicon carbide with an aggressive cost-down focus going forward,” says president & CEO Greg Knight. “We are at-scale now for volume production and can add capacity more rapidly than anyone in the industry,” he claims. SiC will allow electric vehicles to have markedly better range because the material enables much smaller and lighter modules and circuits, the firm notes. This holds true for other industrial applications where high-power and high-temperature demands preclude the use of more common silicon material.

CrystX silicon carbide is available in bulk-crystal form and ready for wafering. Presently, the available form factor is 150mm in diameter, with a target usable height of 25mm or greater.

“The rapidly growing power electronics and EV markets can now take advantage of our ability to produce exceptionally high-quality CrystX silicon carbide at volumes and cost structures that global markets will demand,” concludes Knight.

See related items:

GTAT opens new silicon carbide manufacturing plant, corporate HQ and R&D center

GTAT launches SiC boule growth furnace addressing emerging demand for 6” wafers

Tags: GT SiC

Visit: www.gtat.com

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