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7 June 2007


Nitronex introduces 4W GaN on Si pre-driver power transistor

Nitronex of Durham, NC, USA has introduced its new 4W GaN on Si pre-driver power transistor, the NPTB00004, at this week’s IEEE MTT-S International Microwave Symposium (IMS 2007) in Hawaii.

A high-power, high-efficiency transistor, the NPTB00004 is designed for cellular, WiMAX and broadband applications. At 900MHz, it has input/output impedances near 50 ohms, which reduces the need for external matching circuits. Under WCDMA modulation at 2.1GHz, the power typically delivers 14.5dB of power gain, 25% efficiency at an ACPR of -45dBc, says Nitronex.

According to Chris Rauh, Nitronex’s VP sales and marketing: “The NPTB00004 provides improved power and efficiency for a given linearity compared to existing solutions in the pre-driver market.”

Sampling of the NPTB00004 begins this month, with full production qualification expected in August. The NPTB00004 is lead-free and RoHS compliant, and has a 1000 piece suggested price of $9.00.

See related item:

Nitronex launches 100W GaN-on-Si HEMT power transistor for WiMAX