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News

17 September 2007

 

Innolume launches high-power 1.2µm broadband gain chip

Innolume GmbH of Dortmund, Germany, which manufactures quantum-dot based laser diodes, gain chips and semiconductor optical amplifiers (SOAs) operating at 1.05–1.32µm, has begun sampling the GC-1200/160-200mW, a new-generation gain chip providing broad optical gain centered at 1.2µm. The launch represents a further expansion of the firm’s product lines beyond high-power lasers and SOAs.

Optimized for operation in an external-cavity setup, the GC-1200/160-200mW has typical minimum output power of 200mW over a tuning range of 160nm in a wavelength range otherwise not exploitable using conventional semiconductor light sources. The curved waveguide structure supports very low reflectivity of typically less than 10e-5 for the angled facet. The standard product is delivered in a chip-on-submount configuration. Initial customer feedback indicates that the new chip exceeds the performance and quality expectations of module and subsystem providers, says business development manager Guido Vogel. “This chip enables completely new applications in instrumentation, industrial and medical systems which previously could no be produced due to the absence of suitable light sources,” he claims.

“Tunable lasers and swept lasers for spectroscopy, metrology and optical coherence tomography benefit from the wide tuning range,” adds Dr Alexey Kovsh, chief technology officer. “By applying the proper optics and gratings, the new chip may also be used to create fixed-wavelength laser sources with a very narrow line-width well suited for direct frequency conversion to visible light used in, for example, laser projection and flow cytometry.”

See related items:

Innolume develops quantum-dot SOAs

NL adds silicon photonics capabilities and changes name to Innolume

NL Nanosemiconductor acquires Zia Laser

Visit: www.innolume.com