29 July 2015

GaN Systems signs Shenzhen-based SZ APL as distribution partner in China and Taiwan

GaN Systems Inc of Ottawa, Ontario, Canada - a fabless producer of gallium nitride (GaN)-based power switching transistors based on its proprietary Island Technology for power conversion and control applications - has appointed Shenzhen APL to distribute its Island Technology high-power gallium nitride devices in China and Taiwan. With headquarters in Shenzhen and additional offices in Shanghai, Beijing and Taipei, SZ APL has extensive experience in power electronics components distribution to major tier-1 customers in the automotive, industrial and enterprise segments.

SZ APL has "both significant knowledge of power electronics and strong relationships with tier-1 Chinese and Taiwanese customers," comments GaN Systems' president Girvan Patterson. "Demand for our GaN power switching transistors is growing very rapidly as manufacturers seek to design smaller, lighter and more power-efficient products in order to gain competitive edge. We are expecting multiple consumer and enterprise products designed with our GaN devices to be launched in the region in early 2016, with other applications from our industrial and automotive customers to follow later next year," he adds.  

"Prior to signing our distribution agreement with GaN Systems, discussions with our tier-1 customers confirmed GaN Systems as their first-choice manufacturer of GaN E-HEMTs [enhancement-mode high-electron-mobility transistor]," comments SZ APL's president Henry Ruan.

"SZ APL has many key relationships with major tier-1 customers in China and Taiwan, as well as a strong focus and understanding of power electronics and power ICs," says Charles Bailley, GaN Systems' senior director, sales & marketing, Asia. "During 2015, we have significantly increased our customer penetration in China and Taiwan and look forward to working with SZ APL to continuously add further major design wins."

GaN Systems claims to be the first firm to have developed and productized a comprehensive portfolio of GaN E-HEMT power devices with current ratings from 7A to 250A, in both 650V and 100V ranges. The firm's Island Technology die design - combined with the extremely low inductance and thermal efficiency of  GaNPX packaging and DriveAssist technology - provides its GaN E-HEMTs with what is reckoned to be a 45x improvement in switching and conduction performance over silicon MOSFETs and IGBTs.

See related items:

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GaN Systems signs Websolus as distributor in South Korea and China

GaN Systems adds Ecomal Europe as distributor of GaN power switching transistors

GaN Systems appoints Daito Electron as Japan and Korea distributor

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Tags: GaN Systems Power electronics

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