31 January 2019

Latest issue of Semiconductor Today now available

For coverage of all the key business and technology developments in compound semiconductors and advanced silicon materials and devices over the last month, subscribe to Semiconductor Today magazine.

Published today and free of charge, Semiconductor Today’s latest issue covers all that is new in gallium arsenide (GaAs), indium phosphide (InP), nitrides, silicon carbide (SiC), silicon germanium (SiGe) and other compound semiconductor materials. The magazine also covers the devices and applications that these materials enable.

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Articles in this issue include:

• Mid-IR AlGaN quantum cascade detector on silicon
• Quantum dot lasers on CMOS-compatible on-axis Si substrates
• GaN vertical-channel junction field-effect transistors
• Increasing current performance in nitride p-channel transistors
• Laser annealing enables gate-first fabrication of nitride transistors
• Improving ohmic contacts in III-nitride HEMTs
• GaN power market growing at CAGR of 55% to 2023
• High-speed and high-power semiconductor material advances
• Imec reports first direct growth of 2D materials on 300mm wafers

Plus, there's the news from organisations such as: II-VI Inc, ALLOS, Alta Devices, Anokiwave, Aixtron, AXT, BluGlass, Compound Semiconductor Centre, Cree, Crystal IS, CST Global, EPC, Emcore, EV Group, First Solar, GaN Systems, IQE, LayTec, Linton Crystal Technologies, Lumentum, MACOM, Midsummer, Neophotonics, Nichia, nLight, Oclaro, OIPT, Osram, Plessey, Qorvo, Riber, Samsung, Sanan, SemiLEDs, Seoul Semiconductor, Skyworks, Solar Frontier, Teledyne e2v, Transphorm, Ulvac, UnitedSiC, Veeco, Wolfspeed, and much more.

See company profiles from Aixtron, EV Group, Goodfellow, k-Space, LayTec, Oxford Instruments, and Veeco.

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